First-principles studies of water adsorption on graphene: The role of the substrate

We investigate the electronic properties of graphene upon water adsorption and study the influence of the SiO2 substrate in this context using density functional calculations. Perfect suspended graphene is rather insensitive to H2O adsorbates, as doping requires highly oriented H2O clusters. For graphene on a defective SiO2 substrate, we find a strongly different behavior: H2O adsorbates can shift the substrate's impurity bands and change their hybridization with the graphene bands. In this way, H2O can lead to doping of graphene for much lower adsorbate concentrations than for free hanged graphene. The effect depends strongly on the microscopic substrate properties.Comment: 4 pages, 3 figure

Decoupling method for dynamical mean field theory calculations

In this paper we explore the use of an equation of motion decoupling method as an impurity solver to be used in conjunction with the dynamical mean field self-consistency condition for the solution of lattice models. We benchmark the impurity solver against exact diagonalization, and apply the method to study the infinite $U$ Hubbard model, the periodic Anderson model and the $pd$ model. This simple and numerically efficient approach yields the spectra expected for strongly correlated materials, with a quasiparticle peak and a Hubbard band. It works in a large range of parameters, and therefore can be used for the exploration of real materials using LDA+DMFT.Comment: 30 pages, 7 figure

Adhesion and electronic structure of graphene on hexagonal boron nitride substrates

We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion energies for different crystallographic stacking configurations and show that the interlayer bonding is due to long-range van der Waals forces. The interplay of elastic and adhesion energies is shown to lead to stacking disorder and moir\'e structures. Band structure calculations reveal substrate induced mass terms in graphene which change their sign with the stacking configuration. The dispersion, absolute band gaps and the real space shape of the low energy electronic states in the moir\'e structures are discussed. We find that the absolute band gaps in the moir\'e structures are at least an order of magnitude smaller than the maximum local values of the mass term. Our results are in agreement with recent STM experiments.Comment: 8 pages, 8 figures, revised and extended version, to appear in Phys. Rev.

Probing of valley polarization in graphene via optical second-harmonic generation

Valley polarization in graphene breaks inversion symmetry and therefore leads to second-harmonic generation. We present a complete theory of this effect within a single-particle approximation. It is shown that this may be a sensitive tool to measure the valley polarization created, e.g., by polarized light and, thus, can be used for a development of ultrafast valleytronics in graphene.Comment: 5 pages, 3 figure

Local impurity effects in superconducting graphene

We study the effect of impurities in superconducting graphene and discuss their influence on the local electronic properties. In particular, we consider the case of magnetic and non-magnetic impurities being either strongly localized or acting as a potential averaged over one unit cell. The spin dependent local density of states is calculated and possibilities for visualizing impurities by means of scanning tunneling experiments is pointed out. A possibility of identifying magnetic scatters even by non spin-polarized scanning tunneling spectroscopy is explained.Comment: 4 pages, 4 figure

Correlation effects on the electronic structure of TiOCl: a NMTO+DMFT study

Using the recently developed N-th order muffin-tin orbital-based downfolding technique in combination with the Dynamical Mean Field theory, we investigate the electronic properties of the much discussed Mott insulator TiOCl in the undimerized phase. Inclusion of correlation effects through this approach provides a description of the spectral function into an upper and a lower Hubbard band with broad valence states formed out of the orbitally polarized, lower Hubbard band. We find that these results are in good agreement with recent photo-emission spectra.Comment: 4 pages, 3 figure

Nature of the Mott transition in Ca2RuO4

We study the origin of the temperature-induced Mott transition in Ca2RuO4. As a method we use the local-density approximation+dynamical mean-field theory. We show the following. (i) The Mott transition is driven by the change in structure from long to short c-axis layered perovskite (L-Pbca to S-Pbca); it occurs together with orbital order, which follows, rather than produces, the structural transition. (ii) In the metallic L-Pbca phase the orbital polarization is ~0. (iii) In the insulating S-Pbca phase the lower energy orbital, ~xy, is full. (iv) The spin-flip and pair-hopping Coulomb terms reduce the effective masses in the metallic phase. Our results indicate that a similar scenario applies to Ca_{2-x}Sr_xRuO_4 (x<0.2). In the metallic x< 0.5 structures electrons are progressively transferred to the xz/yz bands with increasing x, however we find no orbital-selective Mott transition down to ~300 K.Comment: 4 pages, 3 figures; published versio

Double Counting in LDA+DMFT - The Example of NiO

An intrinsic issue of the LDA+DMFT approach is the so called double counting of interaction terms. How to choose the double-counting potential in a manner that is both physically sound and consistent is unknown. We have conducted an extensive study of the charge transfer system NiO in the LDA+DMFT framework using quantum Monte Carlo and exact diagonalization as impurity solvers. By explicitly treating the double-counting correction as an adjustable parameter we systematically investigated the effects of different choices for the double counting on the spectral function. Different methods for fixing the double counting can drive the result from Mott insulating to almost metallic. We propose a reasonable scheme for the determination of double-counting corrections for insulating systems.Comment: 7 pages, 6 figure

Formal Design of Asynchronous Fault Detection and Identification Components using Temporal Epistemic Logic

Autonomous critical systems, such as satellites and space rovers, must be able to detect the occurrence of faults in order to ensure correct operation. This task is carried out by Fault Detection and Identification (FDI) components, that are embedded in those systems and are in charge of detecting faults in an automated and timely manner by reading data from sensors and triggering predefined alarms. The design of effective FDI components is an extremely hard problem, also due to the lack of a complete theoretical foundation, and of precise specification and validation techniques. In this paper, we present the first formal approach to the design of FDI components for discrete event systems, both in a synchronous and asynchronous setting. We propose a logical language for the specification of FDI requirements that accounts for a wide class of practical cases, and includes novel aspects such as maximality and trace-diagnosability. The language is equipped with a clear semantics based on temporal epistemic logic, and is proved to enjoy suitable properties. We discuss how to validate the requirements and how to verify that a given FDI component satisfies them. We propose an algorithm for the synthesis of correct-by-construction FDI components, and report on the applicability of the design approach on an industrial case-study coming from aerospace.Comment: 33 pages, 20 figure